Improvement in light-output efficiency of AlGaInP LEDs fabricated on stripe patterned epitaxy

Y. J. Lee*, H. C. Tseng, Hao-Chung Kuo, S. C. Wang, C. W. Chang, T. C. Hsu, Y. L. Yang, M. H. Hsieh, M. J. Jou, B. J. Lee

*Corresponding author for this work

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Abstract

Quaternary AlGaInP light-emitting diodes (LEDs) operating at a wavelength of 630 nm with a stripe-patterned omni-directional reflector (ODR) were fabricated. It is demonstrated that the geometrical shape of stripe-patterned structure improves the light extraction efficiency by increasing the extraction of guided light. The optical and electrical characteristics of stripe-patterned ODR LEDs are presented and compared to typical ODR and distributed Bragg reflector (DBR) LEDs with the same epitaxial structure and emitting wavelength. It is shown that the output power of the stripe-patterned ODR LED exceeds that of the typical ODR and DBR LEDs by a factor of 1.15 and 2 times, respectively, and with an acceptable forward voltage of about 2.2 V.

Original languageEnglish
Pages (from-to)2532-2534
Number of pages3
JournalIEEE Photonics Technology Letters
Volume17
Issue number12
DOIs
StatePublished - 1 Dec 2005

Keywords

  • AlGaInP
  • Light-emitting diode (LED)
  • Omni-directional reflector (ODR)

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    Lee, Y. J., Tseng, H. C., Kuo, H-C., Wang, S. C., Chang, C. W., Hsu, T. C., Yang, Y. L., Hsieh, M. H., Jou, M. J., & Lee, B. J. (2005). Improvement in light-output efficiency of AlGaInP LEDs fabricated on stripe patterned epitaxy. IEEE Photonics Technology Letters, 17(12), 2532-2534. https://doi.org/10.1109/LPT.2005.859147