Improvement in etching rate for epilayer lift-off with surfactant

Fan Lei Wu*, Ray-Hua Horng, Jian Heng Lu, Chun Li Chen, Yu Cheng Kao

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this study, the GaAs epilayer is quickly separated from GaAs substrate by epitaxial lift-off (ELO) process with mixture etchant solution. The HF solution mixes with surfactant as mixture etchant solution to etch AlAs sacrificial layer for the selective wet etching of AlAs sacrificial layer. Addiction surfactants etchant significantly enhance the etching rate in the hydrofluoric acid etching solution. It is because surfactant provides hydrophilicity to change the contact angle with enhances the fluid properties of the mixture etchant between GaAs epilayer and GaAs substrate. Arsine gas was released from the etchant solution because the critical reaction product in semiconductor etching is dissolved arsine gas. Arsine gas forms a bubble, which easily displaces the etchant solution, before the AlAs layer was undercut. The results showed that acetone and hydrofluoric acid ratio of about 1:1 for the fastest etching rate of 13.2 μm/min. The etching rate increases about 4 times compared with pure hydrofluoric acid, moreover can shorten the separation time about 70% of GaAs epilayer with GaAs substrate. The results indicate that etching ratio and stability are improved by mixture etchant solution. It is not only saving the epilayer and the etching solution exposure time, but also reducing the damage to the epilayer structure.

Original languageEnglish
Title of host publicationPhysics, Simulation, and Photonic Engineering of Photovoltaic Devices II
DOIs
StatePublished - 10 Jun 2013
Event2nd Symposium on Physics, Simulation, and Photonic Engineering of Photovoltaic Devices - San Francisco, CA, United States
Duration: 3 Feb 20137 Feb 2013

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8620
ISSN (Print)0277-786X

Conference

Conference2nd Symposium on Physics, Simulation, and Photonic Engineering of Photovoltaic Devices
CountryUnited States
CitySan Francisco, CA
Period3/02/137/02/13

Keywords

  • AlAs sacrificial layer
  • Etching Rate
  • Hydrofluoric acid
  • Surfactant

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  • Cite this

    Wu, F. L., Horng, R-H., Lu, J. H., Chen, C. L., & Kao, Y. C. (2013). Improvement in etching rate for epilayer lift-off with surfactant. In Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II [86201Y] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8620). https://doi.org/10.1117/12.2004237