Improvement in etching rate for epilayer lift-off application with low surface tension fluid

Ray-Hua Horng, F. L. Wu, M. C. Tseng

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this study, GaAs epilayer is quickly separated from GaAs substrate by epitaxial lift-off (ELO) process with mixture etchant solution. The HF solution mixes with low surface tension fluid as mixture etchant solution to etch sacrificial layer. The pattern array is not only used as etching path for the selective wet etching of AlAs sacrificial layer, but also used to define the cell size. The release time depends different the concentration ratio of mixture etchant solution and cell size. The concentration ratio of 1:1 mixture etchant shows the fastest lateral etching rate (13.2μ/min) for 1 mm2 cell size. It is because HF mixture etchant solution provides hydrophilicity to modify the surface tension energy between GaAs epilayer and GaAs substrate. The low surface tension fluid enhances the fluid properties of the mixture etchant between GaAs epilayer and GaAs substrate. The results indicate that etching ratio and stability are improved by mixture etchant solution.

Original languageEnglish
Title of host publicationLow-Dimensional Nanoscale Electronic and Low-Dimensional Nanoscale Electronic and on Compound Semiconductors 54, SOTAPOCS 2012
Pages361-365
Number of pages5
Edition6
DOIs
StatePublished - 1 Dec 2012
EventSymposia on Low-Dimensional Nanoscale Electronic and Photonic Devices 5 and State-of-the-Art Program on Compound Semiconductors 2012, SOTAPOCS 54 - 222nd ECS Meeting/PRiME 2012 - Honolulu, HI, United States
Duration: 7 Oct 201212 Oct 2012

Publication series

NameECS Transactions
Number6
Volume50
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceSymposia on Low-Dimensional Nanoscale Electronic and Photonic Devices 5 and State-of-the-Art Program on Compound Semiconductors 2012, SOTAPOCS 54 - 222nd ECS Meeting/PRiME 2012
CountryUnited States
CityHonolulu, HI
Period7/10/1212/10/12

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