Improvement in efficiency droop of GaN-based lightemitting diodes by optimization of active regions

Da Wei Lin*, Chao Hsun Wang, Shih Pang Chang, Ching Hsueh Chiu, Yu-Pin Lan, Zhen Yu Li, Jin Chai Li, Tien-chang Lu, Shing Chung Wang, Hao-Chung Kuo

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

In this paper, we propose several methods to improve the efficiency droop of GaNbased light-emitting diodes by optimization of active regions, such as alternative substrates, semipolar MQWs, insertion layer, graded-thickness MQWs, and graded-composition EBL.

Original languageEnglish
Article numberAS3F.4
JournalAsia Communications and Photonics Conference, ACP
DOIs
StatePublished - 1 Jan 2012
Event2012 Asia Communications and Photonics Conference, ACP 2012 - Guangzhou, China
Duration: 7 Nov 201210 Nov 2012

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