In this paper, we propose several methods to improve the efficiency droop of GaNbased light-emitting diodes by optimization of active regions, such as alternative substrates, semipolar MQWs, insertion layer, graded-thickness MQWs, and graded-composition EBL.
|Journal||Asia Communications and Photonics Conference, ACP|
|State||Published - 1 Jan 2012|
|Event||2012 Asia Communications and Photonics Conference, ACP 2012 - Guangzhou, China|
Duration: 7 Nov 2012 → 10 Nov 2012