Improved uniformity and electrical performance of continuous-wave laser-crystallized TFTs using metal-induced laterally crystallized Si film

Chih Pang Chang*, Yew-Chuhg Wu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Continuous-wave (CW) laser crystallization (CLC) of amorphous Si (α-Si) has previously been employed to fabricate high-performance low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). Unfortunately, their uniformity was poor because the shape of the beam profiles was Gaussian. In this study, α-Si film was replaced by Ni-metal-induced laterally crystallized Si (MILC-Si). MILCLC-Si was MILC-Si irradiated by a CW laser (λ ≈ 532 nm and power ≈ 3.8 W). It was found that the performance and uniformity of the metal-induced laterally crystallized continuous-wave laser crystallization - thin film transistors (MILCLC-TFTs) were much better than those of the CLC-TFTs. Therefore, the MILCLC-TFT is suitable for application in systems on panels.

Original languageEnglish
Pages (from-to)1653-1656
Number of pages4
JournalJournal of Electronic Materials
Volume37
Issue number11
DOIs
StatePublished - 1 Nov 2008

Keywords

  • Continuous-wave laser
  • Metal-induced lateral crystallization
  • Polycrystalline-silicon thin-film transistors

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