Improved ultrathin gate oxide integrity in p+-polysilicon-gate p-channel metal oxide semiconductor with medium-dose fluorine implantation

Chi Chun Chen, Horng-Chih Lin, Chun Yen Chang, Tiao Yuan Huang, Chao-Hsin Chien, Mong Song Liang

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


Effects of fluorine incorporation on ultrathin (4 nm) gate oxide integrity were investigated by fluorine co-implantation into p+ polysilicon gate. In contrast to previous reports that fluorine incorporation worsens boron penetration and degrades oxide reliability, it was observed that with a medium F+ dose (approximately 1×1014 cm-2), charge-to-breakdown characteristics can be improved without noticeable enhancement of boron penetration. It was also observed that fluorinated oxide depicts improved immunity to plasma damage as is evidenced by suppressed gate leakage current of antenna devices after plasma processing.

Original languageEnglish
Pages (from-to)290-292
Number of pages3
JournalElectrochemical and Solid-State Letters
Issue number6
StatePublished - 1 Jun 2000

Fingerprint Dive into the research topics of 'Improved ultrathin gate oxide integrity in p<sup>+</sup>-polysilicon-gate p-channel metal oxide semiconductor with medium-dose fluorine implantation'. Together they form a unique fingerprint.

Cite this