The Letter reports the improved thermal performance of AIGaAs/GaAs heterojunction bipolar transistors (HBTs) by removal of the GaAs substrate and transferring the epitaxial layers to optimal substrates (TELOS). The thermal resistance of HBTs has been halved by transfer to diamond substrates. 3 inch-diameter (76.2mm) epitaxial layers have been transferred, retaining a surface flatness suitable for high resolution photolithography.
- Aluminium gallium arsenide
- Gallium arsenide
- Heterojunction bipolar transistors