Improved thermal performance of AlGaAs/GaAs HBTs by transferring the epitaxial layers to high-thermal-conductivity substrates

G. J. Sullivan, M. K. Szwed, D. A. Hardwick, J. A. Higgins, J. R. Waldrop, Mau-Chung Chang

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

The Letter reports the improved thermal performance of AIGaAs/GaAs heterojunction bipolar transistors (HBTs) by removal of the GaAs substrate and transferring the epitaxial layers to optimal substrates (TELOS). The thermal resistance of HBTs has been halved by transfer to diamond substrates. 3 inch-diameter (76.2mm) epitaxial layers have been transferred, retaining a surface flatness suitable for high resolution photolithography.

Original languageEnglish
Pages (from-to)1890-1891
Number of pages2
JournalElectronics Letters
Volume29
Issue number21
DOIs
StatePublished - 1 Jan 1993

Keywords

  • Aluminium gallium arsenide
  • Gallium arsenide
  • Heterojunction bipolar transistors

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