Improved TDDB Reliability and Interface States in 5-nm Hf0.5Zr0.5O2 Ferroelectric Technologies Using NH3 Plasma and Microwave Annealing

Yi Hsuan Chen, Chun-Jung Su, Ting-Hsin Yang, Chenming Hu, Tian-Li Wu*

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

This article reports that the enhanced forward gate bias time-dependent dielectric breakdown (TDDB) reliability and interface quality are achieved in 5-nm ferroelectric Hf 0.5 Zr 0.5 O 2 (HZO) technologies by using the NH 3 plasma interfacial layer (IL) treatment and microwave annealing (MWA). An orthorhombic crystalline phase is observed in the annealed HZO film with NH 3 plasma IL treatment and MWA, and NH 3 plasma IL treatment can suppress Hf/Zr interdiffusion. Metal-oxide-semiconductor capacitors (MOSCAPs) subjected to NH 3 plasma IL treatment and 2100-W MWA also have a higher extrapolated operating voltage for a ten-year lifetime at 0.01% failure and lower interface state density ( Dit ) compared to the devices subjected to only rapid thermal annealing (RTA) at 600 °C. Therefore, NH 3 plasma treatment and MWA are effective for improving the TDDB reliability and interface quality of the ultrathin ferroelectric HZO.
Original languageEnglish
Pages (from-to)1581-1585
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume67
Issue number4
DOIs
StatePublished - Apr 2020

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