Improved Subthreshold Swing and Short Channel Effect in FDSOI n-Channel Negative Capacitance Field Effect Transistors

Daewoong Kwon; Korok Chatterjee; Ava J. Tan; Ajay K. Yadav; Hong Zhou; Angada B. Sachid; Roberto Dos Reis; Chen-Ming Hu; Sayeef Salahuddin

doi:10.1109/LED.2017.2787063

Improved Subthreshold Swing and Short Channel Effect in FDSOI n-Channel Negative Capacitance Field Effect Transistors

Daewoong Kwon^*, Korok Chatterjee, Ava J. Tan, Ajay K. Yadav, Hong Zhou, Angada B. Sachid, Roberto Dos Reis, Chen-Ming Hu, Sayeef Salahuddin

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

68 Scopus citations

Abstract

Negative capacitance (NC) FETs with channel lengths from 30 nm to 50~\mu \text{m} , gated with ferroelectric hafnium zirconium oxide are fabricated on fully depleted silicon-on-insulator (FDSOI) substrates. Enhanced capacitance due to NC, hysteresis-free operation, and improved subthreshold slope are observed. The NC effect leads to enhancement of drain current for small voltage operation. In addition, improved short channel performance is demonstrated owing to the reverse drain induced barrier lowering characteristics of the NC operation.

Original language	English
Article number	8239602
Pages (from-to)	300-303
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	39
Issue number	2
DOIs	https://doi.org/10.1109/LED.2017.2787063
State	Published - 1 Feb 2018

Keywords

Ferroelectric
hafnium zirconium oxide
negative capacitance
negative drain induced barrier lowering (DIBL)
short-channel transistor

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title = "Improved Subthreshold Swing and Short Channel Effect in FDSOI n-Channel Negative Capacitance Field Effect Transistors",

abstract = "Negative capacitance (NC) FETs with channel lengths from 30 nm to 50~\mu \text{m} , gated with ferroelectric hafnium zirconium oxide are fabricated on fully depleted silicon-on-insulator (FDSOI) substrates. Enhanced capacitance due to NC, hysteresis-free operation, and improved subthreshold slope are observed. The NC effect leads to enhancement of drain current for small voltage operation. In addition, improved short channel performance is demonstrated owing to the reverse drain induced barrier lowering characteristics of the NC operation.",

keywords = "Ferroelectric, hafnium zirconium oxide, negative capacitance, negative drain induced barrier lowering (DIBL), short-channel transistor",

author = "Daewoong Kwon and Korok Chatterjee and Tan, {Ava J.} and Yadav, {Ajay K.} and Hong Zhou and Sachid, {Angada B.} and Reis, {Roberto Dos} and Chen-Ming Hu and Sayeef Salahuddin",

year = "2018",

month = feb,

day = "1",

doi = "10.1109/LED.2017.2787063",

language = "English",

volume = "39",

pages = "300--303",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

Improved Subthreshold Swing and Short Channel Effect in FDSOI n-Channel Negative Capacitance Field Effect Transistors. / Kwon, Daewoong; Chatterjee, Korok; Tan, Ava J.; Yadav, Ajay K.; Zhou, Hong; Sachid, Angada B.; Reis, Roberto Dos; Hu, Chen-Ming; Salahuddin, Sayeef.

In: IEEE Electron Device Letters, Vol. 39, No. 2, 8239602, 01.02.2018, p. 300-303.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Improved Subthreshold Swing and Short Channel Effect in FDSOI n-Channel Negative Capacitance Field Effect Transistors

AU - Kwon, Daewoong

AU - Chatterjee, Korok

AU - Tan, Ava J.

AU - Yadav, Ajay K.

AU - Zhou, Hong

AU - Sachid, Angada B.

AU - Reis, Roberto Dos

AU - Hu, Chen-Ming

AU - Salahuddin, Sayeef

PY - 2018/2/1

Y1 - 2018/2/1

N2 - Negative capacitance (NC) FETs with channel lengths from 30 nm to 50~\mu \text{m} , gated with ferroelectric hafnium zirconium oxide are fabricated on fully depleted silicon-on-insulator (FDSOI) substrates. Enhanced capacitance due to NC, hysteresis-free operation, and improved subthreshold slope are observed. The NC effect leads to enhancement of drain current for small voltage operation. In addition, improved short channel performance is demonstrated owing to the reverse drain induced barrier lowering characteristics of the NC operation.

AB - Negative capacitance (NC) FETs with channel lengths from 30 nm to 50~\mu \text{m} , gated with ferroelectric hafnium zirconium oxide are fabricated on fully depleted silicon-on-insulator (FDSOI) substrates. Enhanced capacitance due to NC, hysteresis-free operation, and improved subthreshold slope are observed. The NC effect leads to enhancement of drain current for small voltage operation. In addition, improved short channel performance is demonstrated owing to the reverse drain induced barrier lowering characteristics of the NC operation.

KW - Ferroelectric

KW - hafnium zirconium oxide

KW - negative capacitance

KW - negative drain induced barrier lowering (DIBL)

KW - short-channel transistor

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U2 - 10.1109/LED.2017.2787063

DO - 10.1109/LED.2017.2787063

M3 - Article

AN - SCOPUS:85039780817

VL - 39

SP - 300

EP - 303

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 2

M1 - 8239602

ER -