Improved sub-micron CMOS device performance due to fluorine in CVD tungsten silicide

Vivek Jain*, Dipankar Pramanik, K. Y. Chang, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

7 Scopus citations

Abstract

It is shown that the use of CVD WSix in polycides results in a high concentration of fluorine in the gate oxide. The high fluorine concentration in the gate oxide results in increase in the physical gate oxide thickness. The presence of fluorine in CVD WSix results in significant improvement in subthreshold characteristics for both P- and N-MOS submicron devices over sputtered WSix. A reduction in subthreshold slope and leakage current as well as a tighter distribution of these parameters was observed. In addition, improved hot carrier immunity for the CVD WSix process attributed to the fluorine in the gate oxide was observed. Thus CVD WSix should be preferred over sputtered WSix for submicron CMOS devices.

Original languageEnglish
Pages (from-to)91-92
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
DOIs
StatePublished - 1 Dec 1991
Event1991 Symposium on VLSI Technology - Oiso, Jpn
Duration: 28 May 199130 May 1991

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