Improved stress reliability of analog metal-insulator-metal capacitors using TiO 2 ZrO 2 dielectrics

S. H. Lin, K. C. Chiang, F. S. Yeh, Albert Chin

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

We have studied the stress reliability of high-k Ni/TiO 2 ZrO 2 TiN metalinsulatormetal capacitors under constant-voltage stress. The increasing TiO 2 thickness on ZrO 2 improves the 125- °C leakage current, capacitance variation (Δ C/C), and long-term reliability. For a high density of 26 fFμ m 2 , good extrapolated ten-year reliability of small Δ C/ C ̃0.71% is obtained for the Ni/10-nm-TiO 2 6.5-nm-ZrO 2 TiN device at 2.5-V operation.

Original languageEnglish
Article number5313962
Pages (from-to)1287-1289
Number of pages3
JournalIEEE Electron Device Letters
Volume30
Issue number12
DOIs
StatePublished - 1 Dec 2009

Keywords

  • High k
  • Metal-insulator-metal (MIM)
  • Reliability
  • TiO
  • ZrO

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