We have studied the stress reliability of high-k Ni/TiO 2 ZrO 2 TiN metalinsulatormetal capacitors under constant-voltage stress. The increasing TiO 2 thickness on ZrO 2 improves the 125- °C leakage current, capacitance variation (Δ C/C), and long-term reliability. For a high density of 26 fFμ m 2 , good extrapolated ten-year reliability of small Δ C/ C ̃0.71% is obtained for the Ni/10-nm-TiO 2 6.5-nm-ZrO 2 TiN device at 2.5-V operation.
- High k
- Metal-insulator-metal (MIM)