Improved RF power performance in a 0.18-μ MOSFET which uses an asymmetric drain design

T. Chang*, H. L. Kao, S. P. McAlister, K. Y. Horng, Albert Chin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

We have fabricated 0.18-μ asymmetric MOSFETs using a foundry-standard 1P6M process, without making any process modifications. In comparison with a conventional 0.18-μ MOSFET, the asymmetric MOSFET design leads to a 64% improvement in the saturated output power and 8 dB better adjacent channel power ratio. The improvement in the RF power performance of these MOS transistors suggests that they should be suitable for medium power amplifiers.

Original languageEnglish
Pages (from-to)1402-1404
Number of pages3
JournalIEEE Electron Device Letters
Volume29
Issue number12
DOIs
StatePublished - 8 Dec 2008

Keywords

  • Asymmetric
  • Lightly doped-drain (LDD)
  • MOS

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