Improved resistive switching properties of Ti/ZrO 2 /Pt memory devices for RRAM application

Sheng Yu Wang, Chen Han Tsai, Dai Ying Lee, Chih Yang Lin, Chun Chieh Lin, Tseung-Yuen Tseng*

*Corresponding author for this work

Research output: Contribution to journalArticle

28 Scopus citations

Abstract

In this study, we have investigated the effect of current compliance during forming process on resistive switching (RS) characteristics of the Ti/ZrO 2 /Pt device. The higher the current compliance is, the larger RS operation voltage is needed. The Ti/ZrO 2 /Pt device with high device yield can be operated over 10,000 RS cycles by sweeping dc voltage, and the on and off two memory states exhibit good stability under 0.3 V stress voltage. Moreover, the data retention of both memory states is over 10 5 s. As applying +6-V 10-ns and -3-V 10-ns voltage pulses on the device, there are operation errors observed during continuous write-read-erase-read cycles until increasing the pulse width to 50 ns. Nondestructive readout tests are also performed on the Ti/ZrO 2 /Pt device before and after 10 3 pulse cycles without any obvious degradation observed. Compared with reported ZrO 2 -based memory devices, our Ti/ZrO 2 /Pt device exhibits better RS properties and has a high potential for memory application.

Original languageEnglish
Pages (from-to)1628-1632
Number of pages5
JournalMicroelectronic Engineering
Volume88
Issue number7
DOIs
StatePublished - 1 Jul 2011

Keywords

  • Nonvolatile memory
  • Resistive switching
  • RRAM
  • ZrO

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