Improved reliability of Mo nanocrystal memory with ammonia plasma treatment

Chao Cheng Lin*, Ting Chang Chang, Chun Hao Tu, Wei Ren Chen, Chih Wei Hu, Simon M. Sze, Tseung-Yuen Tseng, Sheng Chi Chen, Jian Yang Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

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Abstract

We investigated ammonia plasma treatment influence on the nonvolatile memory characteristics of the charge storage layer composed of Mo nanocrystals embedded in nonstoichiometry oxide (SiOx). X-ray photoelectron spectra analyses revealed that nitrogen was incorporated into the charge storage layer. Electric analyses indicated that the memory window was reduced and the retention and the endurance improved after the treatment. The reduction in the memory window and the improvement in retention were interpreted in terms of the nitrogen passivation of traps in the oxide around Mo nanocrystals. The robust endurance characteristic was attributed the improvement of the quality of the surrounding oxide by nitrogen passivation.

Original languageEnglish
Article number062106
JournalApplied Physics Letters
Volume94
Issue number6
DOIs
StatePublished - 23 Feb 2009

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