Improved reliability of GaN HEMTs using N2 plasma surface treatment

S. C. Liu, G. M. Dai, Edward Yi Chang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

In this work, we present a systematic study on AlGaN surface treatment by N2 plasma treatment prior to SiN deposition to enhance the reliability of the AlGaN/GaN MIS-HEMT. N2 plasma treatment can effective remove surface impurities and discharge at the GaN surface, thus improving the SiN/GaN interface quality. With this technique, the GaN MIS-HEMT exhibits excellent reliability after high-gate-bias stress, high-drain-bias stress, and continuously long-term switching.

Original languageEnglish
Title of host publicationProceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages378-380
Number of pages3
ISBN (Electronic)9781479999286, 9781479999286
DOIs
StatePublished - 25 Aug 2015
Event22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015 - Hsinchu, Taiwan
Duration: 29 Jun 20152 Jul 2015

Publication series

NameProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Volume2015-August

Conference

Conference22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015
CountryTaiwan
CityHsinchu
Period29/06/152/07/15

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