Improved radio frequency power characteristics of complementary metal-oxide-semiconductor-compatible asymmetric-lightly-doped-drain metal-oxide-semiconductor transistor

Tsu Chang, Hsuan Ling Kao*, Y. J. Chen, Albert Chin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

We have characterized and modeled the radio frequency (RF) power performance of a 0.18 mm asymmetric-lightly-doped-drain metal-oxide- semiconductor field-effect transistor (LDD MOSFET). In comparison with the conventional 0.18 mm MOSFET, this asymmetric-LDD device shows a larger power density of 0.54W/mm, and 8 dB better adjacent channel power ratio (ACPR) linearity at 2.4 GHz from the improved twice DC breakdown voltage of 6.9 V. These significant improvements of RF power performance in the asymmetric-LDD transistor are important for the medium RF power amplifier application.

Original languageEnglish
JournalJapanese Journal of Applied Physics
Volume49
Issue number3 PART 1
DOIs
StatePublished - 1 Jul 2010

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