Improved power conversion efficiency of InGaN photovoltaic devices grown on patterned sapphire substrates

C. C. Yang, J. K. Sheu, Cheng-Huang Kuo, M. S. Huang, S. J. Tu, F. W. Huang, M. L. Lee, Yu Hsiang Yeh, X. W. Liang, W. C. Lai

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Abstract

The InGaN/sapphire-based photovoltaic (PV) cells with Al 0.14 Ga 0.86 N/In 0.21 Ga 0.79 N superlattice structures that serve as absorption layers were grown on patterned sapphire substrates (PSSs). Under global air-mass 1.5 conditions, the shortcircuit current density, the open-circuit voltage, and the fill factor obtained from the PV cells were 1.21 mA/cm 2 , 2.18 V, and 0.65, respectively, corresponding to a conversion efficiency of 1.71%. Compared with PV devices grown on flat sapphire substrates, the photocurrent of PSS-grown PV devices was enhanced by 26%. The improved PV performance was attributable to the positive effects of the PSS on the material quality.

Original languageEnglish
Article number5719623
Pages (from-to)536-538
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number4
DOIs
StatePublished - 1 Apr 2011

Keywords

  • InGaN
  • patterned sapphire substrate (PSS)
  • photovoltaic (PV)

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    Yang, C. C., Sheu, J. K., Kuo, C-H., Huang, M. S., Tu, S. J., Huang, F. W., Lee, M. L., Yeh, Y. H., Liang, X. W., & Lai, W. C. (2011). Improved power conversion efficiency of InGaN photovoltaic devices grown on patterned sapphire substrates. IEEE Electron Device Letters, 32(4), 536-538. [5719623]. https://doi.org/10.1109/LED.2011.2107725