Improved photoswitching response times of MoS2 field-effect transistors by stacking p -type copper phthalocyanine layer

Jinsu Pak, Misook Min, Kyungjune Cho, Der Hsien Lien, Geun Ho Ahn, Jingon Jang, Daekyoung Yoo, Seungjun Chung*, Ali Javey, Takhee Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

Photoswitching response times (rise and decay times) of a vertical organic and inorganic heterostructure with p-type copper phthalocyanine (CuPc) and n-type molybdenum disulfide (MoS2) semiconductors are investigated. By stacking a CuPc layer on MoS2 field effect transistors, better photodetection capability and fast photoswitching rise and decay phenomena are observed. Specifically, with a 2 nm-thick CuPc layer on the MoS2 channel, the photoswitching decay time decreases from 3.57 s to 0.18 s. The p-type CuPc layer, as a passivation layer, prevents the absorption of oxygen on the surface of the MoS2 channel layer, which results in a shortened photoswitching decay time because adsorbed oxygen destroys the balanced ratio of electrons and holes, leading to the interruption of recombination processes. The suggested heterostructure may deliver enhanced photodetection abilities and photoswitching characteristics for realizing ultra-thin and sensitive photodetectors.

Original languageEnglish
Article number183502
JournalApplied Physics Letters
Volume109
Issue number18
DOIs
StatePublished - 31 Oct 2016

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