Improved photoluminescence of 1.26 μm InGaAsGaAs quantum wells assisted by Sb surfactant and indium-graded intermediate layers

Yi An Chang, Hao-Chung Kuo*, Ya Hsien Chang, Shing Chung Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

We have grown high-quality InGaAsGaAs quantum wells (QWs) with emission wavelength range of 1.2-1.26 μm by metalorganic chemical vapor depositions. By incorporating Sb surfactant and the indium-graded intermediate layers into InGaAsGaAs QWs, the photoluminescence (PL) intensity of the 1.26-μm In0.45 Ga0.55 AsGaAs QW is enhanced by a factor of 20 and the full width at half maximum value is reduced from 60.4 meV to 35.9 meV. The good crystalline quality is proved by temperature-dependent PL, which shows that the activation energies of In0.45 Ga0.55 As and Sb-assisted indium-graded In0.45 Ga0.55 As QWs are 20.87 meV and 27.09 meV.

Original languageEnglish
Article number061908
JournalApplied Physics Letters
Volume87
Issue number6
DOIs
StatePublished - 5 Sep 2005

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