Poly-SiGe is investigated as the gate material for CMOS transistors with ultra-thin HfO2 gate dielectric. Compared with poly-Si, poly-SiGe reduces the gate depletion effect, and also results in thinner EOT of the gate dielectric after 1000°C annealing, with low gate leakage maintained. The Si interface quality is also better than that achieved with surface nitridation, which has been used to reduce EOT. Therefore, the use of poly-SiGe as the gate material is effective for improving the performance of ultra-thin HfO2 CMOS transistors.
|Number of pages||2|
|State||Published - 1 Jan 2002|
|Event||2002 Symposium on VLSI Technology Digest of Technical Papers - Honolulu, HI, United States|
Duration: 11 Jun 2002 → 13 Jun 2002
|Conference||2002 Symposium on VLSI Technology Digest of Technical Papers|
|Period||11/06/02 → 13/06/02|