Improved performance of near-ultraviolet InGaN/AlGaN LEDs with various insertion structures

Dong Sing Wuu*, Wen Yu Lin, Ying Chiuan Tsai, Shih Cheng Huang, Ray-Hua Horng, Chien Min Liu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this study, two approaches using various insertion structures are proposed for the near-UV LEDs. One is through a single MOCVD process where a heavily Mg-doped GaN insertion layer (HD-IL) technique is employed to improve crystalline quality of the GaN layer and followed by rest of required GaN-based LED structure. Another approach was demonstrated by the near-UV LEDs with an embedded distributed SiO2-disk structure. The periodically spaced hexagonal disk-shaped SiO2 mask array was deposited on the GaN/sapphire template and followed by the MOCVD regrowth process. These improvements contribute the high-performance 380-nm LEDs with enhanced output powers by 20-40% in magnitude.

Original languageEnglish
Title of host publicationLight-Emitting Diodes
Subtitle of host publicationMaterials, Devices, and Applications for Solid State Lighting XIV
DOIs
StatePublished - 5 May 2010
EventLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV - San Francisco, CA, United States
Duration: 26 Jan 201028 Jan 2010

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7617
ISSN (Print)0277-786X

Conference

ConferenceLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV
CountryUnited States
CitySan Francisco, CA
Period26/01/1028/01/10

Keywords

  • Distributed SiO mask
  • Heavily Mg-doped GaN insertion layer
  • InGaN
  • Insertion structure
  • Light-emitting diode (LED)
  • Near ultraviolet (UV)

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  • Cite this

    Wuu, D. S., Lin, W. Y., Tsai, Y. C., Huang, S. C., Horng, R-H., & Liu, C. M. (2010). Improved performance of near-ultraviolet InGaN/AlGaN LEDs with various insertion structures. In Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV [76171H] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7617). https://doi.org/10.1117/12.845439