Improved performance of NDLC poly-Si nanowire TFTs by using Ni-gettering

Bau Ming Wang*, Tzu Ming Yang, Yew-Chuhg Wu, Chun Jung Su, Horng-Chih Lin

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Nickel contamination inside nickel-metal induced lateral crystallization polycrystalline silicon is an issue to fabricate high performance nanowire thin film transistors. The phosphorous-doped α-Si/chem-SiO2 films were employed as Ni-gettering layers to investigate effect of Ni residues on the performance of NILC poly-Si NW TFTs. It was found that the performance of NW TFTs was greatly improved after Ni-gettering process.

Original languageEnglish
Title of host publicationThin Film Transistors 10, TFT 10
Pages169-172
Number of pages4
Edition5
DOIs
StatePublished - 1 Dec 2010
Event10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting - Las Vegas, NV, United States
Duration: 11 Oct 201015 Oct 2010

Publication series

NameECS Transactions
Number5
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period11/10/1015/10/10

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