Improved performance of MIC poly-Si TFTs using Driven-in nickel Induced Crystallization (DIC) with Cap SiO2 by F implantation

Ming Hui Lai*, Yew-Chuhg Wu, Teng Fu Tung, Hung Yu Wu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A cap oxide layer was employed to substantially decrease nickel residues and passivate the trap states of the devices. F+ implantation was used to drive Ni in α-Si layer to induce crystallization (DIC) process with cap oxide to reduce Ni concentration and minimize the trap-state density. As a result, DIC-TFT with cap oxide exhibit higher field-effect mobility, lower subthreshold slope, lower threshold voltage, higher on/off current ratio, and lower trap-state density (Nt) compared with conventional MIC TFTs.

Original languageEnglish
Title of host publicationAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6
Subtitle of host publicationNew Materials, Processes, and Equipment
Pages405-407
Number of pages3
Edition1
DOIs
StatePublished - 30 Dec 2010
EventAdvanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 6 - 217th ECS Meeting - Vancouver, BC, Canada
Duration: 26 Apr 201027 Apr 2010

Publication series

NameECS Transactions
Number1
Volume28
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceAdvanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 6 - 217th ECS Meeting
CountryCanada
CityVancouver, BC
Period26/04/1027/04/10

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    Lai, M. H., Wu, Y-C., Tung, T. F., & Wu, H. Y. (2010). Improved performance of MIC poly-Si TFTs using Driven-in nickel Induced Crystallization (DIC) with Cap SiO2 by F implantation. In Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment (1 ed., pp. 405-407). (ECS Transactions; Vol. 28, No. 1). https://doi.org/10.1149/1.3375628