Improved Performance of InGaN/GaN Light-Emitting Diodes With Thin Intermediate Barriers

Bo Chun Chen, Chun Yen Chang, Yi Keng Fu, Kai-Feng Huang, Yu Hsuan Lu, Yan Kuin Su

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

In this work, the performance of blue InGaN/GaN light-emitting diodes (LEDs) with thin intermediate barriers at high injection current is investigated. From the experimental results, it is found that the performance of LEDs with intermediate 5-nm-thick barriers is improved about 15% at 200 mA, compared with the sample with unique 9-nm-thick barriers. A numerical study is executed to analyze the hole distributions in the quantum wells. From the simulated results, it is found that the hole injection efficiency can be improved at high injection current. Hence, the effective recombination of electron and hole is also enhanced at high injection current.

Original languageEnglish
Pages (from-to)1682-1684
Number of pages3
JournalIEEE Photonics Technology Letters
Volume23
Issue number22
DOIs
StatePublished - 1 Jan 2011

Keywords

  • Efficiency droop
  • internal quantum efficiency
  • light-emitting diodes (LEDs)

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