Improved performance of InGaN-GaN light-emitting diode by a periodic n-bowl mirror array

Cheng Liao*, Yew-Chuhg Wu

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

A periodic n-bowl mirror structure was introduced into light-emitting diodes with roughened p-GaN surface (RP-LED) by wafer bonding and laser lift-off technology. The performance of these n-bowl mirror light-emitting diodes (NBM-LEDs) was better than that of RP-LED. Besides, the light intensity and the output power of NBM-LEDs were increased with the decrease in n-bowl dimension. The view angle was decreased with the diameter of the n-bowl.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume12
Issue number9
DOIs
StatePublished - 31 Jul 2009

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