Improved performance of F-ions-implanted poly-Si thin-film transistors using solid phase crystallization and excimer laser crystallization

Chun Hao Tu*, Ting Chang Chang, Po-Tsun Liu, Che Yu Yang, Li Wei Feng, Chia Chou Tsai, Li Ting Chang, Yung Chun Wu, Simon M. Sze, Chun-Yen Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Polycrystalline silicon thin-film transistors (Poly-Si TFTs) with F-ions-implantation were investigated in this study. The electrical characteristics and reliability of the F-ions-implanted poly-Si TFTs were reported for solid phase crystallization (SPC) and excimer laser crystallization (ELC) methods respectively. The thermal annealing causes F-ions to pile up at the poly-Si interface, without the initial pad oxide deposition. With the introduction of fluorine in poly-Si film, the trap state density was effectively reduced. Also, the presence of strong Si-F bonds enhances electrical endurance against hot carrier impact by using F-ions-implantation. These improvements in electrical characteristics are even obvious for the ELC poly-Si TFTs compared to the SPC ones.

Original languageEnglish
Pages (from-to)45-49
Number of pages5
JournalIEEE/OSA Journal of Display Technology
Volume3
Issue number1
DOIs
StatePublished - 1 Mar 2007

Keywords

  • Excimer laser crystallization (ELC)
  • F-ions implant
  • Polycrystalline silicon thin-film transistors (poly-Si TFTs)
  • SPC

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