Improved performance of 375 nm InGaN/AlGaN light-emitting diodes by incorporating a heavily Si-doped transition layer

Shih Cheng Huang*, Kun Ching Shen, Po Min Tu, Dong Sing Wuu, Hao-Chung Kuo, Ray-Hua Horng

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

High performance 375-nm ultraviolet (UV) InGaN/AlGaN light-emitting diodes (LEDs) was developed using a heavy Si-doping technique with metalorganic chemical vapor deposition (MOCVD). From the transmission electron microcopy (TEM) image, the dislocation density was reduced after inserting a heavily Si-doping growth mode transition layer (GMTL) between un-doped GaN layer and Si-doped Al 0.02 Ga 0.98 N contact layer. The internal quantum efficiency (IQE) of the sample with GMTL measured by power-dependent photoluminescence shows 39.4% improved compared with the sample without GMTL. When the vertical type LED chips (size: 1mm×1mm) driving by a 350-mA current, the output powers of the LEDs with and without GMTL were measured to be 286.7 mW and 204.2 mW, respectively. As much as 40.4% increased light output power was achieved. Therefore, using the GMTL to reduce dislocation defects would be a promising prospective for InGaN/AlGaN UV LEDs to achieve high internal quantum efficiency.

Original languageEnglish
Title of host publicationGallium Nitride Materials and Devices VII
DOIs
StatePublished - 16 Apr 2012
EventGallium Nitride Materials and Devices VII - San Francisco, CA, United States
Duration: 23 Jan 201226 Jan 2012

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8262
ISSN (Print)0277-786X

Conference

ConferenceGallium Nitride Materials and Devices VII
CountryUnited States
CitySan Francisco, CA
Period23/01/1226/01/12

Keywords

  • Light emitting diodes
  • Si-doping

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    Huang, S. C., Shen, K. C., Tu, P. M., Wuu, D. S., Kuo, H-C., & Horng, R-H. (2012). Improved performance of 375 nm InGaN/AlGaN light-emitting diodes by incorporating a heavily Si-doped transition layer. In Gallium Nitride Materials and Devices VII [82621L] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8262). https://doi.org/10.1117/12.909580