Improved performance of 375 nm InGaN/AlGaN light-emitting diodes by incorporating a heavily Si-doped transition layer

Shih Cheng Huang; Kun Ching Shen; Po Min Tu; Dong Sing Wuu; Hao-Chung Kuo; Ray-Hua Horng

doi:10.1117/12.909580

Improved performance of 375 nm InGaN/AlGaN light-emitting diodes by incorporating a heavily Si-doped transition layer

Shih Cheng Huang^*, Kun Ching Shen, Po Min Tu, Dong Sing Wuu, Hao-Chung Kuo, Ray-Hua Horng

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

High performance 375-nm ultraviolet (UV) InGaN/AlGaN light-emitting diodes (LEDs) was developed using a heavy Si-doping technique with metalorganic chemical vapor deposition (MOCVD). From the transmission electron microcopy (TEM) image, the dislocation density was reduced after inserting a heavily Si-doping growth mode transition layer (GMTL) between un-doped GaN layer and Si-doped Al _0.02 Ga _0.98 N contact layer. The internal quantum efficiency (IQE) of the sample with GMTL measured by power-dependent photoluminescence shows 39.4% improved compared with the sample without GMTL. When the vertical type LED chips (size: 1mm×1mm) driving by a 350-mA current, the output powers of the LEDs with and without GMTL were measured to be 286.7 mW and 204.2 mW, respectively. As much as 40.4% increased light output power was achieved. Therefore, using the GMTL to reduce dislocation defects would be a promising prospective for InGaN/AlGaN UV LEDs to achieve high internal quantum efficiency.

Original language	English
Title of host publication	Gallium Nitride Materials and Devices VII
DOIs	https://doi.org/10.1117/12.909580
State	Published - 16 Apr 2012
Event	Gallium Nitride Materials and Devices VII - San Francisco, CA, United States Duration: 23 Jan 2012 → 26 Jan 2012

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	8262
ISSN (Print)	0277-786X

Conference

Conference	Gallium Nitride Materials and Devices VII
Country	United States
City	San Francisco, CA
Period	23/01/12 → 26/01/12

Keywords

Light emitting diodes
Si-doping

Access to Document

10.1117/12.909580

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Huang, S. C., Shen, K. C., Tu, P. M., Wuu, D. S., Kuo, H-C., & Horng, R-H. (2012). Improved performance of 375 nm InGaN/AlGaN light-emitting diodes by incorporating a heavily Si-doped transition layer. In Gallium Nitride Materials and Devices VII [82621L] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8262). https://doi.org/10.1117/12.909580

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title = "Improved performance of 375 nm InGaN/AlGaN light-emitting diodes by incorporating a heavily Si-doped transition layer",

abstract = " High performance 375-nm ultraviolet (UV) InGaN/AlGaN light-emitting diodes (LEDs) was developed using a heavy Si-doping technique with metalorganic chemical vapor deposition (MOCVD). From the transmission electron microcopy (TEM) image, the dislocation density was reduced after inserting a heavily Si-doping growth mode transition layer (GMTL) between un-doped GaN layer and Si-doped Al 0.02 Ga 0.98 N contact layer. The internal quantum efficiency (IQE) of the sample with GMTL measured by power-dependent photoluminescence shows 39.4% improved compared with the sample without GMTL. When the vertical type LED chips (size: 1mm×1mm) driving by a 350-mA current, the output powers of the LEDs with and without GMTL were measured to be 286.7 mW and 204.2 mW, respectively. As much as 40.4% increased light output power was achieved. Therefore, using the GMTL to reduce dislocation defects would be a promising prospective for InGaN/AlGaN UV LEDs to achieve high internal quantum efficiency.",

keywords = "Light emitting diodes, Si-doping",

author = "Huang, {Shih Cheng} and Shen, {Kun Ching} and Tu, {Po Min} and Wuu, {Dong Sing} and Hao-Chung Kuo and Ray-Hua Horng",

year = "2012",

month = apr,

day = "16",

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Huang, SC, Shen, KC, Tu, PM, Wuu, DS, Kuo, H-C & Horng, R-H 2012, Improved performance of 375 nm InGaN/AlGaN light-emitting diodes by incorporating a heavily Si-doped transition layer. in Gallium Nitride Materials and Devices VII., 82621L, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8262, Gallium Nitride Materials and Devices VII, San Francisco, CA, United States, 23/01/12. https://doi.org/10.1117/12.909580

Improved performance of 375 nm InGaN/AlGaN light-emitting diodes by incorporating a heavily Si-doped transition layer. / Huang, Shih Cheng; Shen, Kun Ching; Tu, Po Min; Wuu, Dong Sing; Kuo, Hao-Chung ; Horng, Ray-Hua.

Gallium Nitride Materials and Devices VII. 2012. 82621L (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8262).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Kuo, Hao-Chung

AU - Horng, Ray-Hua

PY - 2012/4/16

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N2 - High performance 375-nm ultraviolet (UV) InGaN/AlGaN light-emitting diodes (LEDs) was developed using a heavy Si-doping technique with metalorganic chemical vapor deposition (MOCVD). From the transmission electron microcopy (TEM) image, the dislocation density was reduced after inserting a heavily Si-doping growth mode transition layer (GMTL) between un-doped GaN layer and Si-doped Al 0.02 Ga 0.98 N contact layer. The internal quantum efficiency (IQE) of the sample with GMTL measured by power-dependent photoluminescence shows 39.4% improved compared with the sample without GMTL. When the vertical type LED chips (size: 1mm×1mm) driving by a 350-mA current, the output powers of the LEDs with and without GMTL were measured to be 286.7 mW and 204.2 mW, respectively. As much as 40.4% increased light output power was achieved. Therefore, using the GMTL to reduce dislocation defects would be a promising prospective for InGaN/AlGaN UV LEDs to achieve high internal quantum efficiency.

AB - High performance 375-nm ultraviolet (UV) InGaN/AlGaN light-emitting diodes (LEDs) was developed using a heavy Si-doping technique with metalorganic chemical vapor deposition (MOCVD). From the transmission electron microcopy (TEM) image, the dislocation density was reduced after inserting a heavily Si-doping growth mode transition layer (GMTL) between un-doped GaN layer and Si-doped Al 0.02 Ga 0.98 N contact layer. The internal quantum efficiency (IQE) of the sample with GMTL measured by power-dependent photoluminescence shows 39.4% improved compared with the sample without GMTL. When the vertical type LED chips (size: 1mm×1mm) driving by a 350-mA current, the output powers of the LEDs with and without GMTL were measured to be 286.7 mW and 204.2 mW, respectively. As much as 40.4% increased light output power was achieved. Therefore, using the GMTL to reduce dislocation defects would be a promising prospective for InGaN/AlGaN UV LEDs to achieve high internal quantum efficiency.

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