@inproceedings{5977cb98ebaa4da4a62b9adb69612dcb,
title = "Improved performance of 375 nm InGaN/AlGaN light-emitting diodes by incorporating a heavily Si-doped transition layer",
abstract = " High performance 375-nm ultraviolet (UV) InGaN/AlGaN light-emitting diodes (LEDs) was developed using a heavy Si-doping technique with metalorganic chemical vapor deposition (MOCVD). From the transmission electron microcopy (TEM) image, the dislocation density was reduced after inserting a heavily Si-doping growth mode transition layer (GMTL) between un-doped GaN layer and Si-doped Al 0.02 Ga 0.98 N contact layer. The internal quantum efficiency (IQE) of the sample with GMTL measured by power-dependent photoluminescence shows 39.4% improved compared with the sample without GMTL. When the vertical type LED chips (size: 1mm×1mm) driving by a 350-mA current, the output powers of the LEDs with and without GMTL were measured to be 286.7 mW and 204.2 mW, respectively. As much as 40.4% increased light output power was achieved. Therefore, using the GMTL to reduce dislocation defects would be a promising prospective for InGaN/AlGaN UV LEDs to achieve high internal quantum efficiency.",
keywords = "Light emitting diodes, Si-doping",
author = "Huang, {Shih Cheng} and Shen, {Kun Ching} and Tu, {Po Min} and Wuu, {Dong Sing} and Hao-Chung Kuo and Ray-Hua Horng",
year = "2012",
month = apr,
day = "16",
doi = "10.1117/12.909580",
language = "English",
isbn = "9780819489050",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Gallium Nitride Materials and Devices VII",
note = "null ; Conference date: 23-01-2012 Through 26-01-2012",
}