Improved Negative-Capacitance Switch of Ferroelectric Field Effect Transistor Using Defect Passivation Engineering

Chun-Hu Cheng, Chia Chi Fan, Hsiao-Hsuan Hsu, Shih-An Wang, Chun-Yen Chang

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

A ferroelectric negative-capacitance (NC) transistor using aluminum-doped hafnium oxide (HfAlOx) with fluorine passivation is successfully demonstrated. The fluorine-passivated device shows a nearly hysteresis-free forward/reverse swing of sub-30 mV dec(-1) for symmetric switch, a wide sub-60 mV (dec center dot swing)(-1) range over 4 decades of drain current, an ultralow off-leakage current of 4 fA mu m(-1), and a high on/off current ratio of >10(8). The fluorine defect passivation (FP) reduces oxygen vacancies of ferroelectric HfAlOx to mitigate interface depolarization field and thereby reinforce surface potential amplification effect during NC operation.
Original languageEnglish
Article number1800493
JournalPhysica Status Solidi - Rapid Research Letters
Volume13
Issue number2
DOIs
StatePublished - Feb 2019

Keywords

  • aluminum-doped hafnium oxide; ferroelectrics; fluorine passivation; negative capacitance

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