Improved MOSFET electron mobility model for advanced gate dielectric stacks

I. Polishchuk, Kevin J. Yang, Tsu Jae King, Chen-Ming Hu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publication60th Device Research Conference, DRC 2002
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages75-76
Number of pages2
ISBN (Electronic)0780373170
DOIs
StatePublished - 1 Jan 2002
Event60th Device Research Conference, DRC 2002 - Santa Barbara, United States
Duration: 24 Jun 200226 Jun 2002

Publication series

NameDevice Research Conference - Conference Digest, DRC
Volume2002-January
ISSN (Print)1548-3770

Conference

Conference60th Device Research Conference, DRC 2002
CountryUnited States
CitySanta Barbara
Period24/06/0226/06/02

Keywords

  • CMOS technology
  • Dielectric films
  • Dielectric materials
  • Dielectric measurements
  • Electron mobility
  • MOSFET circuits
  • Nitrogen
  • Oxidation
  • Scattering
  • Semiconductor device modeling

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