Improved modeling of bulk charge effect for BSIM-BULK model

Chetan Gupta; Harshit Agarwal; Ravi Goel; Chen-Ming Hu; Yogesh Singh Chauhan

doi:10.1109/TED.2019.2910107

Improved modeling of bulk charge effect for BSIM-BULK model

Chetan Gupta^*, Harshit Agarwal, Ravi Goel, Chen-Ming Hu, Yogesh Singh Chauhan

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

In this brief, we present an improved model of bulk charge effect for both drain current (I_DS) and capacitances and its implementation in the industry standard Berkeley short-channel IGFET model (BSIM)-BULK model. The proposed model captures all the well-known and important bulk charge effects, as the Abulk term does for BSIM3/BSIM4. The model is validated with the experimental and technology computer-aided design (TCAD) data. The proposed model enhances the fitting accuracy for I_DS, and more importantly its derivatives and capacitances too.

Original language	English
Article number	8693976
Pages (from-to)	2850-2853
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	66
Issue number	6
DOIs	https://doi.org/10.1109/TED.2019.2910107
State	Published - 1 Jun 2019

Keywords

Abulk
BSIM6
Berkeley short-channel IGFET model (BSIM)-BULK
SPICE
bulk charge effect
compact model
drain saturation voltage

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@article{e759782942c64298aefe926c62dcf8ef,

title = "Improved modeling of bulk charge effect for BSIM-BULK model",

abstract = "In this brief, we present an improved model of bulk charge effect for both drain current (IDS) and capacitances and its implementation in the industry standard Berkeley short-channel IGFET model (BSIM)-BULK model. The proposed model captures all the well-known and important bulk charge effects, as the Abulk term does for BSIM3/BSIM4. The model is validated with the experimental and technology computer-aided design (TCAD) data. The proposed model enhances the fitting accuracy for IDS, and more importantly its derivatives and capacitances too.",

keywords = "Abulk, BSIM6, Berkeley short-channel IGFET model (BSIM)-BULK, SPICE, bulk charge effect, compact model, drain saturation voltage",

author = "Chetan Gupta and Harshit Agarwal and Ravi Goel and Chen-Ming Hu and Chauhan, {Yogesh Singh}",

year = "2019",

month = jun,

day = "1",

doi = "10.1109/TED.2019.2910107",

language = "English",

volume = "66",

pages = "2850--2853",

journal = "Ieee Transactions On Electron Devices",

issn = "0018-9383",

publisher = "IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC",

number = "6",

}

TY - JOUR

T1 - Improved modeling of bulk charge effect for BSIM-BULK model

AU - Gupta, Chetan

AU - Agarwal, Harshit

AU - Goel, Ravi

AU - Hu, Chen-Ming

AU - Chauhan, Yogesh Singh

PY - 2019/6/1

Y1 - 2019/6/1

N2 - In this brief, we present an improved model of bulk charge effect for both drain current (IDS) and capacitances and its implementation in the industry standard Berkeley short-channel IGFET model (BSIM)-BULK model. The proposed model captures all the well-known and important bulk charge effects, as the Abulk term does for BSIM3/BSIM4. The model is validated with the experimental and technology computer-aided design (TCAD) data. The proposed model enhances the fitting accuracy for IDS, and more importantly its derivatives and capacitances too.

AB - In this brief, we present an improved model of bulk charge effect for both drain current (IDS) and capacitances and its implementation in the industry standard Berkeley short-channel IGFET model (BSIM)-BULK model. The proposed model captures all the well-known and important bulk charge effects, as the Abulk term does for BSIM3/BSIM4. The model is validated with the experimental and technology computer-aided design (TCAD) data. The proposed model enhances the fitting accuracy for IDS, and more importantly its derivatives and capacitances too.

KW - Abulk

KW - BSIM6

KW - Berkeley short-channel IGFET model (BSIM)-BULK

KW - SPICE

KW - bulk charge effect

KW - compact model

KW - drain saturation voltage

UR - http://www.scopus.com/inward/record.url?scp=85065920088&partnerID=8YFLogxK

U2 - 10.1109/TED.2019.2910107

DO - 10.1109/TED.2019.2910107

M3 - Article

AN - SCOPUS:85065920088

VL - 66

SP - 2850

EP - 2853

JO - Ieee Transactions On Electron Devices

JF - Ieee Transactions On Electron Devices

SN - 0018-9383

IS - 6

M1 - 8693976

ER -

Improved modeling of bulk charge effect for BSIM-BULK model

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