In this brief, we present an improved model of bulk charge effect for both drain current (IDS) and capacitances and its implementation in the industry standard Berkeley short-channel IGFET model (BSIM)-BULK model. The proposed model captures all the well-known and important bulk charge effects, as the Abulk term does for BSIM3/BSIM4. The model is validated with the experimental and technology computer-aided design (TCAD) data. The proposed model enhances the fitting accuracy for IDS, and more importantly its derivatives and capacitances too.
- Berkeley short-channel IGFET model (BSIM)-BULK
- bulk charge effect
- compact model
- drain saturation voltage