Improved modeling of bulk charge effect for BSIM-BULK model

Chetan Gupta*, Harshit Agarwal, Ravi Goel, Chen-Ming Hu, Yogesh Singh Chauhan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


In this brief, we present an improved model of bulk charge effect for both drain current (IDS) and capacitances and its implementation in the industry standard Berkeley short-channel IGFET model (BSIM)-BULK model. The proposed model captures all the well-known and important bulk charge effects, as the Abulk term does for BSIM3/BSIM4. The model is validated with the experimental and technology computer-aided design (TCAD) data. The proposed model enhances the fitting accuracy for IDS, and more importantly its derivatives and capacitances too.

Original languageEnglish
Article number8693976
Pages (from-to)2850-2853
Number of pages4
JournalIEEE Transactions on Electron Devices
Issue number6
StatePublished - 1 Jun 2019


  • Abulk
  • BSIM6
  • Berkeley short-channel IGFET model (BSIM)-BULK
  • bulk charge effect
  • compact model
  • drain saturation voltage

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