Improved modeling of bulk charge effect for BSIM-BULK model

Chetan Gupta*, Harshit Agarwal, Ravi Goel, Chen-Ming Hu, Yogesh Singh Chauhan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

In this brief, we present an improved model of bulk charge effect for both drain current (IDS) and capacitances and its implementation in the industry standard Berkeley short-channel IGFET model (BSIM)-BULK model. The proposed model captures all the well-known and important bulk charge effects, as the Abulk term does for BSIM3/BSIM4. The model is validated with the experimental and technology computer-aided design (TCAD) data. The proposed model enhances the fitting accuracy for IDS, and more importantly its derivatives and capacitances too.

Original languageEnglish
Article number8693976
Pages (from-to)2850-2853
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume66
Issue number6
DOIs
StatePublished - 1 Jun 2019

Keywords

  • Abulk
  • BSIM6
  • Berkeley short-channel IGFET model (BSIM)-BULK
  • SPICE
  • bulk charge effect
  • compact model
  • drain saturation voltage

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