Improved MILC poly-Si TFTs performance using CF4 plasma

Chih Pang Chang*, Yew-Chuhg Wu

*Corresponding author for this work

Research output: Contribution to conferencePaper

Abstract

In this letter, a new manufacturing method for metal-induced lateral crystallization (MILC) polycrystalline silicon thin film transistors (poly-Si TFTs) using CF4 plasma was proposed. It was found that CF4 plasma effectively minimize the trap state density, leading to superior electrical characteristics.

Original languageEnglish
StatePublished - 1 Dec 2009
Event2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009 - Taipei, Taiwan
Duration: 27 Apr 200930 Apr 2009

Conference

Conference2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009
CountryTaiwan
CityTaipei
Period27/04/0930/04/09

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  • Cite this

    Chang, C. P., & Wu, Y-C. (2009). Improved MILC poly-Si TFTs performance using CF4 plasma. Paper presented at 2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009, Taipei, Taiwan.