Improved memory window for Ge nanocrystals embedded in SiON layer

Chun Hao Tu*, Ting Chang Chang, Po-Tsun Liu, Hsin Chou Liu, Simon M. Sze, Chun Yen Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

29 Scopus citations


The formation of germanium (Ge) nanocrystals embedded in silicon oxygen nitride (SiON) is proposed for charge storage elements in this work. The Ge nanocrystals can be nucleated after the oxidation process of silicon germanium nitride (SiGeN) layer at high temperatures. Compared to the control samples of Ge nanocrystals/ Si O2 Si structure and SiONSi stack memory, the proposed Ge nanocrystals/ SiONSi memory obtained superior memory window, even larger than the typical sum of both. It is considered that the extra interface trap states between Ge and SiON film were generated as Ge nanocrystals were embedded in SiON layer.

Original languageEnglish
Article number162105
Number of pages3
JournalApplied Physics Letters
Issue number16
StatePublished - 16 Oct 2006

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