Improved linearity and reliability in GaN metal-oxide-semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric

Ching Hsiang Hsu, Wang Cheng Shih, Yueh Chin Lin, Heng-Tung Hsu, Hisang Hua Hsu, Yu Xiang Huang, Tai Wei Lin, Chia Hsun Wu, Wen Hao Wu, Jer Shen Maa, Hiroshi Iwai, Kuniyuki Kakushima, Edward Yi Chang

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Abstract

Improved device performance to enable high-linearity power applications has been discussed in this study. We have compared the La2O3/SiO2 AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) with other La2O3-based (La2O3/HfO2, La2O3/CeO2 and single La2O3) MOS-HEMTs. It was found that forming lanthanum silicate films can not only improve the dielectric quality but also can improve the device characteristics. The improved gate insulation, reliability, and linearity of the 8 nm La2O3/SiO2 MOS-HEMT were demonstrated.

Original languageEnglish
Article number04EG04
JournalJapanese Journal of Applied Physics
Volume55
Issue number4
DOIs
StatePublished - 1 Apr 2016

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