Improved light output power of GaN-based light-emitting diodes using double photonic quasi-crystal patterns

Hung Wen Huang*, Chung Hsiang Lin, Zhi Kai Huang, Kang Yuan Lee, Chang Chin Yu, Hao-Chung Kuo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

The enhancement of light extraction from GaN-based light-emitting diodes (LEDs) with a double 12-fold photonic quasi-crystal (PQC) structure using nanoimprint lithography is presented. At a driving current of 20 mA on a transistor-outline-can package, the light output power of an LED with a nanohole patterned sapphire substrate (NHPSS) and an LED with a double PQC structure are enhanced by 34% and 61%, compared with the conventional LED. In addition, the higher output power of the LED with the double PQC structure is due to better reflectance on NHPSS and higher scattering effect on p-GaN surface using a 12-fold PQC structure pattern. These results provide promising potential to increase the output powers of commercial light-emitting devices.

Original languageEnglish
Pages (from-to)1152-1154
Number of pages3
JournalIEEE Electron Device Letters
Volume30
Issue number11
DOIs
StatePublished - 6 Nov 2009

Keywords

  • Gallium nitride (GaN)
  • Light-emitting diodes (LEDs)
  • Nanoimprint lithography (NIL)
  • Photonic quasi-crystal (PQC)

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