Improved high-temperature leakage in high-density MIM capacitors by using a TiLaO dielectric and an Ir electrode

C. H. Cheng*, H. C. Pan, H. J. Yang, C. N. Hsiao, C. P. Chou, S. P. McAlister, Albert Chin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

48 Scopus citations

Abstract

We have fabricated high-κ. TaN/Ir/TiLaO/TaN metal-insulator-metal capacitors. A low leakage current of 6.6 × 10-7 A/ cm2 was obtained at 125 °C for 24-fF/μm2 density capacitors. The excellent device performance is due to the combined effects of the high-κ TiLaO dielectric, a high workfunction Ir electrode, and large conduction band offset.

Original languageEnglish
Pages (from-to)1095-1097
Number of pages3
JournalIEEE Electron Device Letters
Volume28
Issue number12
DOIs
StatePublished - 1 Dec 2007

Keywords

  • High-κ
  • High-temperature techniques
  • Ir
  • Metal-insulator-metal (MIM)
  • MIM devices
  • TiLaO

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