Improved GZO thin film properties with SiOx buffer layer by atmospheric pressure plasma deposition

Kuo Hui Yang, Po Ching Ho, Je Wei Lin, Ta Hsin Chou, Kow-Ming Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The Ga-doped zinc-oxides (GZO) as the transparency conductive oxide is the good candidate for substituting ITO. The buffer layer SiOx could improve the quality of GZO thin film. The atmospheric pressure plasma multi-jets (APPMJ) system with three jets was designed and applied for SiOx deposition process. The deposition thickness of three jets was 2.5 times higher than that of single jet, and the uniformity was less than 5% for the area 100mm2. GZO thin film with SiOx buffer layer had 3% decreases in resistivity compared to GZO thin film due to the increasing of mobility. The SiOx/glass fabricated APPMJ system will be a good alternative substrate to bare glass for producing high quality GZO film for advanced electro-optic applications.

Original languageEnglish
Title of host publicationPrecision Engineering and Nanotechnology V
PublisherTrans Tech Publications Ltd
Pages196-200
Number of pages5
ISBN (Print)9783038352112
DOIs
StatePublished - 1 Jan 2015
Event5th International Conference on Asian Society for Precision Engineering and Nanotechnology, ASPEN 2013 - Taipei, Taiwan
Duration: 12 Nov 201315 Nov 2013

Publication series

NameKey Engineering Materials
Volume625
ISSN (Print)1013-9826

Conference

Conference5th International Conference on Asian Society for Precision Engineering and Nanotechnology, ASPEN 2013
CountryTaiwan
CityTaipei
Period12/11/1315/11/13

Keywords

  • Atmospheric pressure plasma
  • Buffer layer
  • Deposition
  • Multi-jets
  • Sheet resistance

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