Improved gettering efficiency of ni from nickel-mediated crystallization silicon using phosphorus-doped amorphous silicon

Bau Ming Wang, Yew-Chuhg Wu

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

Ni-metal-induced lateral crystallization (NILC) has been utilized to fabricate polycrystalline silicon thin-film transistors. However, the NILC process often leads to Ni and NiSi 2 precipitates being trapped. In this study, two kinds of films were used as gettering layers: (1) amorphous Si and (2) phosphorus-doped amorphous Si. After annealing at 550°C for 12 h, it was found that phosphorous dopant did improve the gettering efficiency of amorphous Si.

Original languageEnglish
Pages (from-to)767-771
Number of pages5
JournalJournal of Electronic Materials
Volume38
Issue number6
DOIs
StatePublished - 1 Jun 2009

Keywords

  • Chemical oxide (chem-SiO )
  • Ni gettering
  • Phosphorus dopant

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