Improved electrical performance of NILC poly-Si TFTs manufactured using H2SO4 and HCl solution

Yu Chung Chen*, Yu Cheng Chao, Yew-Chuhg Wu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

In this study, we fabricated a NILC surface on a SiO2-coated silicon wafer, and then used HCl solution and H2SO4 + H2O2 solution to do surface treatment. The treatment could reduce Ni or NiSi2 that was trapped at the surface of silicon and therefore the electrical characteristics of these devices were improved.

Original languageEnglish
Title of host publicationThin Film Transistors 10, TFT 10
Pages165-168
Number of pages4
Edition5
DOIs
StatePublished - 1 Dec 2010
Event10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting - Las Vegas, NV, United States
Duration: 11 Oct 201015 Oct 2010

Publication series

NameECS Transactions
Number5
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period11/10/1015/10/10

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