Ni-metal-induced crystallization (MIC) of amorphous Si (α-Si) has been employed to fabricate low-temperature polycrystalline silicon thin-film transistors (TFTs). However, the Ni residues degrade the device performance. In this study, a new method for manufacturing MIC-TFTs using drive-in Ni-induced crystallization with a chemical oxide layer (DICC) is proposed. Compared with that of MIC-TFTs, the on/off current ratio (I on/I off) of DICC-TFTs was increased by a factor of 9.7 from 9.21 × 10 4 to 8.94 × 10 5. The leakage current (I off) of DICC-TFTs was 4.06 pA/μm, which was much lower than that of the MIC-TFTs (19.20 pA/μm). DICC-TFTs also possess high immunity against hot-carrier stress and thereby exhibit good reliability.
- Drive-in nickel-induced crystallization
- chemical oxide
- fluorine ion implantation
- metal-induced crystallization
- thin-film transistors (TFTs)