Improved electrical characteristics of CoSi2 using HF-vapor pretreatment

Y. H. Wu*, W. J. Chen, S. L. Chang, Albert Chin, S. Gwo, Chung-Yong Tsai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

We have developed a simple process to form epitaxial CoSi2 for shallow junction. Prior to metal deposition, the patterned wafers were treated with HF-vapor passivation. As observed by scanning tunneling microscopy (STM), this HF treatment drastically improves the native oxide-induced surface roughness. The epitaxial behavior was confirmed by cross-sectional transmission electron microscopy (TEM). Decreased sheet resistance and leakage current, and improved thermal stability are displayed by the HF treated samples, which is consistent with STM and TEM results.

Original languageEnglish
Pages (from-to)200-202
Number of pages3
JournalIEEE Electron Device Letters
Volume20
Issue number5
DOIs
StatePublished - 1 May 1999

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