Improved electrical characteristics and reliability of MILC Poly-Si TFTs using fluorine-ion implantation

Chih Pang Chang*, Yew-Chuhg Wu

*Corresponding author for this work

Research output: Contribution to journalArticle

19 Scopus citations

Abstract

In this letter, fluorine-ion (F+) implantation was employed to improve the electrical performance of metal-induced lateral-crystallization (MILC) polycrystalline-silicon thin-film transistors (poly-Si TFTs). It was found that fluorine ions minimize effectively the trap-state density, leading to superior electrical characteristics such as high field-effect mobility, low threshold voltage, low subthreshold slope, and high ON/OFF-current ratio. F+-implantedMILC TFTs also possess high immunity against the hot-carrier stress and, thereby, exhibit better reliability than that of typical MILC TFTs. Moreover, the manufacturing processes are simple (without any additional thermal-annealing step), and compatible with typical MILC poly-Si TFT fabrication processes.

Original languageEnglish
Pages (from-to)990-992
Number of pages3
JournalIEEE Electron Device Letters
Volume28
Issue number11
DOIs
StatePublished - 1 Nov 2007

Keywords

  • Fluorine-ion implantation
  • Metal-induced lateral crystallization (MILC)
  • Polycrystalline-silicon thin-film transistors (poly-Si TFTs)

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