Improved current drivability and poly-gate depletion of submicron PMOSFET with poly-SiGe gate and ultra-thin nitride gate dielectric

C. H. Chen, Y. K. Fang*, C. W. Yang, S. F. Ting, Y. S. Tsair, C. N. Chang, Tuo-Hung Hou, M. F. Wang, M. C. Yu, C. L. Lin, S. C. Chen, C. H. Yu, M. S. Liang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

The electrical properties of poly-SiGe gated PMOSFETs have been investigated and compared to the conventional poly-Si gated device. Both types of PMOSFETs use ultra-thin nitride gate dielectric. Poly-SiGe gated devices exhibit 10% higher inversion capacitance, improved subthreshold properties, and superior current drivability. The improvements are contributed to the suppression of the poly-gated depletion effect and the enhanced carrier mobility.

Original languageEnglish
Pages (from-to)597-599
Number of pages3
JournalSolid-State Electronics
Volume46
Issue number4
DOIs
StatePublished - 1 Apr 2002

Keywords

  • Nitride
  • PDE
  • Poly-gate depletion
  • Poly-SiGe

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