Improved crystallization temperature and interfacial properties of HfO2 gate dielectrics by adding Ta2O5with TaN metal gate

Xiongfei Yu, Chunxiang Zhu, Qingchun Zhang, Nan Wu, Hang Hu, Albert Chin, M. F. Li, D. S.H. Chan, W. D. Wang, Dim Lee Kwong

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper presents high-κ value Ta2O5 (~26)1 incorporated into the HfO2 (~25) 1 film to unproved crystallization temperature and interfacial properties. Both MOS-C and NMOSFET devices were fabricated on (100)Si substrates. After definition of active area and standard pre-gate clean, the NH3 surface nitridation was performed at 700°C for 10sec (XRD, TEM and XPS samples without surface nitridation). HfO2 and (HfO2)1-x(Ta2O5)x were deposited with reactive sputtering at room temperature, and the composition of Ta2O5 was controlled by the power ratio between Hf and Ta target, followed by post-deposition annealing (PDA) in N2 ambient at 700°C for 40 sec. The TaN (~160nm) was deposited using sputtering. After gate patterning, phosphorus for NMOSFETs were implanted at 50 KeV with a dose of 5E15 cm-2. Doping activation was done at the range of 850~1000°C in N2 ambient for 30 sec. After backside Al deposition, FGA was done at 420°C for 30 min.

Original languageEnglish
Title of host publication2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages62-63
Number of pages2
ISBN (Electronic)0780381394, 9780780381391
DOIs
StatePublished - 1 Jan 2003
EventInternational Semiconductor Device Research Symposium, ISDRS 2003 - Washington, United States
Duration: 10 Dec 200312 Dec 2003

Publication series

Name2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

Conference

ConferenceInternational Semiconductor Device Research Symposium, ISDRS 2003
CountryUnited States
CityWashington
Period10/12/0312/12/03

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