Improved crystal quality and performance of GaN-based light-emitting diodes by decreasing the slanted angle of patterned sapphire

Ji Hao Cheng, Yew-Chuhg Wu, Wei Chih Liao, Bo Wen Lin

Research output: Contribution to journalArticlepeer-review

71 Scopus citations

Abstract

Periodic triangle pyramidal array patterned sapphire substrates (PSSs) with various slanted angles were fabricated by wet etching. It was found beside normal wurtzite GaN, zinc blende GaN was found on the sidewall surfaces of PSS. The crystal quality and performance of PSS-LEDs improved with decrease in slanted angle from 57.4°to 31.6°. This is because most of the growth of GaN was initiated from c -planes. As the growth time increased, GaN epilayers on the bottom c -plane covered these pyramids by lateral growth causing the threading dislocation to bend toward the pyramids.

Original languageEnglish
Article number051109
JournalApplied Physics Letters
Volume96
Issue number5
DOIs
StatePublished - 17 Feb 2010

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