Improved conversion efficiency of GaN/InGaN thin-film solar cells

Ray-Hua Horng*, Shih Ting Lin, Yu Li Tsai, Mu Tao Chu, Wen Yih Liao, Ming Hsien Wu, Ray Ming Lin, Yuan Chieh Lu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

83 Scopus citations


In this letter, we report on the fabrication and photovoltaic characteristics of p-i-n GaN/InGaN thin-film solar cells. The thin-film solar cells were fabricated by removing sapphire using a laser lift-off technique and, then, transferring the remaining p-i-n structure onto a Ti/Ag mirror-coated Si substrate via wafer bonding. The mirror structure is helpful to enhance light absorption for a solar cell with a thin absorption layer. After the thin-film process for a conventional sapphire-based p-i-n solar cell, the device exhibits an enhancement factor of 57.6% in current density and an increment in conversion efficiency from 0.55% to 0.80%. The physical origin for the photocurrent enhancement in the thin-film solar cell is related to multireflection of light by the mirror structure.

Original languageEnglish
Pages (from-to)724-726
Number of pages3
JournalIEEE Electron Device Letters
Issue number7
StatePublished - 8 Jun 2009


  • Laser lift-off
  • Thin-film solar cell
  • Wafer bonding

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