Improved contact performance of GaN film using Si diffusion

C. F. Lin*, Huang-Chung Cheng, G. C. Chi, C. J. Bu, M. S. Feng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

In this letter, we investigate a metalization process for reducing the contact resistance on undoped GaN layers. The Si metal source was diffused successfully into the GaN films by using SiOx/Si/GaN/Al2O3 structures. By using a high-temperature annealing process, we diffused and activated the Si atoms into the GaN film. This caused a heavy doped n-type GaN layer to be formed near the GaN surface. Under high temperatures, such as a diffusion process at 1000°C, the as-deposited Ni/Al/Ti contact had good ohmic properties and a low specific contact resistivity (ρc) of 1.6×10-3 Ω cm2. Rapid thermal annealing the contact at 800°C for 30 s caused the ρc to decrease rapidly to 5.6×10-7 Ω cm2. The Ni/Al/Ti contact characteristics on the GaN films diffused at various temperatures are also discussed.

Original languageEnglish
Pages (from-to)1878-1880
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number14
DOIs
StatePublished - 3 Apr 2000

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