Improved carrier injection in GaN-based VCSEL via AlGaN/GaN multiple quantum barrier electron blocking layer

D. H. Hsieh, A. J. Tzou, Tsung-Sheng Kao, F. I. Lai, D. W. Lin, B. C. Lin, Tien-Chang Lu, W. C. Lai, Cheng-Huan Chen, Hao-Chung Kuo

Research output: Contribution to journalArticlepeer-review

30 Scopus citations

Abstract

In this report, the improved lasing performance of the III-nitride based vertical-cavity surface-emitting laser (VCSEL) has been demonstrated by replacing the bulk AlGaN electron blocking layer (EBL) in the conventional VCSEL structure with an AlGaN/GaN multiple quantum barrier (MQB) EBL. The output power can be enhanced up to three times from 0.3 mW to 0.9 mW. In addition, the threshold current density of the fabricated device with the MQB-EBL was reduced from 12 kA/cm2 (9.5 mA) to 10.6 kA/cm2 (8.5 mA) compared with the use of the bulk AlGaN EBL. Theoretical calculation results suggest that the improved carrier injection efficiency can be mainly attributed to the partial release of the strain and the effect of quantum interference by using the MQB structure, hence increasing the effective barrier height of the conduction band.

Original languageEnglish
Pages (from-to)27145-27151
Number of pages7
JournalOptics Express
Volume23
Issue number21
DOIs
StatePublished - 19 Oct 2015

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