Improved capacitance density and reliability of high-κNi/ZrO 2/TiN MIM capacitors using laser-annealing technique

Chung-Yong Tsai, K. C. Chiang, S. H. Lin, K. C. Hsu, C. C. Chi, Albert Chin

Research output: Contribution to journalArticlepeer-review

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We have fabricated high-κNi/ZrO2/TiN metalinsulatormetal capacitors with a very high 52-fF/μm2 capacitance density, a low leakage current of 1.6×10-7Acm2, and good ten-year reliability with a small Δ C/C of 1.7% at 2 V. From X-ray diffraction measurements, laser annealing can improve the permittivity of ZrO2 due to tetragonal-phase formation which in turn helps enhance capacitance density and reliability. Such excellent device integrity is attributed to the combination of enhanced ZrO2 tetragonal phase by laser annealing, high work-function Ni electrode, and good bottom-interface treatment.

Original languageEnglish
Article number5482029
Pages (from-to)749-751
Number of pages3
JournalIEEE Electron Device Letters
Issue number7
StatePublished - 1 Jul 2010


  • High-κ
  • ZrO
  • laser annealing
  • metal-insulator-metal (MIM)
  • reliability

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