Improved air stability of n -channel organic thin-film transistors with surface modification on gate dielectrics

Fang-Chung Chen*, Cheng Hsiang Liao

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

70 Scopus citations

Abstract

The air stability of n -channel organic thin film transistors based on N, N′ -dioctyl-3,4,9,10-perylene tetracarboxylic diimide is improved when modifying the dielectric surfaces with polymer insulators. The hydrophobic nature of the polymer surface inhibits protonation of the siloxyl groups on the Si O2 surface, leading to fewer Si O- groups that can behave as electron traps. Among the polymer insulators tested, the devices modified with hydroxyl-free polymers exhibited the best air stabilities.

Original languageEnglish
Article number103310
JournalApplied Physics Letters
Volume93
Issue number10
DOIs
StatePublished - 8 Sep 2008

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