Improved air-stability of n-channel organic thin film transistors via surface modification on gate dielectrics

Fang-Chung Chen, C. H. Liao, W. P. Huang, T. Huangd

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The air-stability of n-channel organic thin film transistors (OTFTs) has been improved by modifying the dielectric surfaces with polymer insulators. The OTFTs were fabricated using N,N'-dioctyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C8) as the active material and SiO2 modified with different polymers as the gate dielectric. Among the polymer insulators, the device modified with hydroxyl-free polymers exhibited the best performance. For example, the electron mobility, 0.11 cm2 /Vs, in the saturation region, was obtained in the ambient condition for the device with the SiO 2 surface modified with the polymers. The on-off ratio was also as high as 105 . More importantly, the devices modified with hydroxyl-free polymers had better air-stability. The improved stability could be attributed to the passivation of the hydroxyl groups (electron trapping sites) on the SiO2 surface.

Original languageEnglish
Title of host publicationECS Transactions - Thin Film Transistors 9, TFT 9
Pages253-260
Number of pages8
Edition9
DOIs
StatePublished - 1 Dec 2008
EventThin Film Transistors 9, TFT 9 - 214th ECS Meeting - Honolulu, HI, United States
Duration: 13 Oct 200816 Oct 2008

Publication series

NameECS Transactions
Number9
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceThin Film Transistors 9, TFT 9 - 214th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period13/10/0816/10/08

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  • Cite this

    Chen, F-C., Liao, C. H., Huang, W. P., & Huangd, T. (2008). Improved air-stability of n-channel organic thin film transistors via surface modification on gate dielectrics. In ECS Transactions - Thin Film Transistors 9, TFT 9 (9 ed., pp. 253-260). (ECS Transactions; Vol. 16, No. 9). https://doi.org/10.1149/1.2980560